GAZI UNIVERSITY INFORMATION PACKAGE - 2019 ACADEMIC YEAR

COURSE DESCRIPTION
CRYSTAL UPSIZING TECNIQUES I/6111302
Course Title: CRYSTAL UPSIZING TECNIQUES I
Credits 3 ECTS 7.5
Semester 1 Compulsory/Elective Elective
COURSE INFO
 -- LANGUAGE OF INSTRUCTION
  Turkish
 -- NAME OF LECTURER(S)
  Suleyman OZCELIK, Prof.
 -- WEB SITE(S) OF LECTURER(S)
  websitem.gazi.edu.tr/site/sozcelik
 -- EMAIL(S) OF LECTURER(S)
  sozcelik@gazi.edu.tr
 -- LEARNING OUTCOMES OF THE COURSE UNIT
Knowledge about the development of crystal growth
Learning of the liquid phase growth method within bulk crystal growth techniques
Learning of Czochralski and Brigman crystal growth techniques; growth of GaAs, Si, Ge etc. bulk crystals and crystal defects
Learning of micro-and nano-concepts, the location of semiconductor technology, thin films, nanostructures, compound semiconductors
Learning of vacuum, ultra-high vacuum conditions and their techniques; Kinetic Theory of Gases and understanding of the kinetics of gas in high vacuu
Satisfying of knowledge about the epitaxial crystal growth and techniques
Learning of applications and technologies of Chemical vapor-phase deposition / epitaxy (CVD), Metal organic chemical vapor epitaxy (MOCVD) techniques
Learning advantages of Molecular Beam Epitaxy (MBE) technique, beam of resources and cells; crystal growth modes
Learning of source material loading, bake out processes in MBE system, in situ measurement techniques: RHEED, AES and mass spectrometry
Learning of growth processes of III-V group structures with MBE, growth of the calibration samples, growth rate and doping calibration procedures.
 -- MODE OF DELIVERY
  The mode of delivery of this course is Face to face. In addition, MBE and Czochralski systems are introduced to students in the laboratory.
 -- PREREQUISITES AND CO-REQUISITES
  There is no prerequisite or co-requisite for this course.
 -- RECOMMENDED OPTIONAL PROGRAMME COMPONENTS
  There is no recommended optional programme component for this course.
 --COURSE CONTENT
1. Week  Development of crystal growth
2. Week  Bulk crystal growth techniques: the liquid phase growth
3. Week  Czochralski (CZ) crystal growth technique; oven, pulling and rotating mechanisms
4. Week  Growth Of single crystal Si, Ge and compound semiconductor in the CZ system; growth rate, and n and p-type doping.
5. Week  Brigman crystal growth technique; crystal defects
6. Week  Vacuum, ultra-high vacuum conditions and their techniques; Kinetic Theory of Gases
7. Week  Micro-and nano-structured semiconductors, thin films and compound semiconductor crystals, single and multi-layer structures
8. Week  What is epitaxy? Epitaxial crystal growth and their techniques
9. Week  Chemical vapor-phase deposition/epitaxy (CVD), Metal organic chemical vapor epitaxy (MOCVD) techniques
10. Week  Molecular Beam Epitaxy (MBE) technique
11. Week  Molecular / atomic beam sources and beam generators: Knudsen effusion cells, gas, and plasma sources; Beam shutters
12. Week  Cracker cells: the formation of dimer and tetramer species the V group elements, and their effects on the growth.
13. Week  Baking and vacuuming of MBE system, in situ measurement techniques: RHEED, AES, mass spectrometry
14. Week  Preparation of substrate: cleaning the external and internal environment, molecular beam measurement, calibration of beam equivalent flux.
15. Week  Growth processes of III-V semiconductor thin films by MBE, growth of the calibration samples.
16. Week  Basic growth processes in MBE: Growth of compound semiconductor structures, triple, and quadruple alloys
 -- RECOMMENDED OR REQUIRED READING
  Molecular Beam Epitaxy, M.A. Herman, H. Sister (Springer)1996. Semiconductor Devices: Physics and Technology, S.M. Sze (John Wiley and Sons Inc.)2001. 2)The Tecnology an Physics of Molecular beam Epitay, E.H.C Parker (Plenum Pres, NY)1985
 -- PLANNED LEARNING ACTIVITIES AND TEACHING METHODS
  Lecture, Question & Answer, Demonstration
 -- WORK PLACEMENT(S)
  -
 -- ASSESSMENT METHODS AND CRITERIA
 
Quantity
Percentage
 Mid-terms
1
30
 Assignment
1
30
 Exercises
0
0
 Projects
0
0
 Practice
0
0
 Quiz
0
0
 Contribution of In-term Studies to Overall Grade  
60
 Contribution of Final Examination to Overall Grade  
40
 -- WORKLOAD
 Efficiency  Total Week Count  Weekly Duration (in hour)  Total Workload in Semester
 Theoretical Study Hours of Course Per Week
14
2
28
 Practising Hours of Course Per Week
14
2
28
 Reading
0
 Searching in Internet and Library
2
2
4
 Designing and Applying Materials
8
4
32
 Preparing Reports
2
2
4
 Preparing Presentation
5
4
20
 Presentation
2
2
4
 Mid-Term and Studying for Mid-Term
2
6
12
 Final and Studying for Final
2
10
20
 Other
5
5
25
 TOTAL WORKLOAD: 
177
 TOTAL WORKLOAD / 25: 
7.08
 ECTS: 
7.5
 -- COURSE'S CONTRIBUTION TO PROGRAM
NO
 PROGRAM LEARNING OUTCOMES
1
2
3
4
5
1Develop, enhance and deepen and obtain creative original definitions by combining current knowledge of the field and critical thinking and researchX
2comprehend interdisciplinary interactions and relations relevant to physics; analyze, compose, synthesize and evaluate new and complex ideas and to obtain original results by using expertise knowledge of the field,X
3obtain new scientific knowledge and gain higher level of skills in field of searchX
4develop a new scientific method in the field or apply a known method to a different problemX
5research, understand, design, adopt and apply an original subjectX
6question, compose, synthesize and evaluate new and complex ideasX
7publishtheir original works in refereed journalsX
8develop original ideas and methods in the field and also in interdisciplinary fields by using higher level skills such as creative and critical thinking, problem solving and judgmentsX
9present their works and original ideas effectively in a scientific environmentX
10communicate anddiscuss in advance level of writing, oral and visual in at least one foreign languageX
11introduce technological developmentsin anacademic and professional manner and contribute to theprogress of it societyX