GAZI UNIVERSITY INFORMATION PACKAGE - 2019 ACADEMIC YEAR

COURSE DESCRIPTION
CRYSTAL UPSIZING TECHNIQUES II/6121302
Course Title: CRYSTAL UPSIZING TECHNIQUES II
Credits 3 ECTS 7.5
Semester 1 Compulsory/Elective Elective
COURSE INFO
 -- LANGUAGE OF INSTRUCTION
  Turkish
 -- NAME OF LECTURER(S)
   Suleyman OZCELIK, Prof.
 -- WEB SITE(S) OF LECTURER(S)
  websitem.gazi.edu.tr/site/sozcelik
 -- EMAIL(S) OF LECTURER(S)
  sozcelik@gazi.edu.tr
 -- LEARNING OUTCOMES OF THE COURSE UNIT
Epitaksiyel büyütülmüş yapılarda örgü uyumu; gerilme; örgü uyumlu ve uyumsuz yapıların öğrenilmesi Lattice match and strain in the grown epitaxial str
Learning the donor and acceptor doping materials, impurities, structural defects, properties of substrates and their orientations
Learning properties of group III-V layers, doped and undoped structures, the learning of the concept of delta doping
Equilibrium states in MBE; learning of the relations between the substrate and the epi-layer
Growth of the strained structures by MBE, learning the critical thickness, buffer layer and the surface kinetics
Alttaş seçimi; GaAs, GaP, InP alttaşlar üzerine kristal büyütme; Si ve Ge alttaşlar üzerine büyütülebilen yapılar, MEE süreci ilgili teknolojik bilgi
Learning of single and multi-layer growth with MBE
III-V-N: Learning of growth of dilute nitride structures
Learning of superlattices, quantum wells, quantum dot concepts and their growing steps.
Learning of properties of diode, solar cell, photodetector and laser structures, and their growing in MBE.
 -- MODE OF DELIVERY
  The mode of delivery of this course is face to face. In addition, The knowledge-experience is provided by growth experiments using MBE at least in 6 hours.
 -- PREREQUISITES AND CO-REQUISITES
  There is no prerequisite or co-requisite for this course.
 -- RECOMMENDED OPTIONAL PROGRAMME COMPONENTS
  There is no recommended optional programme component for this course
 --COURSE CONTENT
1. Week  Lattice match in the grown epitaxial structures; strain; lattice match and mismatch structures
2. Week  The donor and acceptor doping materials, impurities, structural defects, substrates and their orientations
3. Week  Learning properties of group III-V layers, doping; doped and undoped structures, delta doping
4. Week  Alloy composition and the band gap energy of semiconductor structures for growth process
5. Week  MBE equilibrium; the relations between the substrate and the epi-layer
6. Week  Growth of the strained structures by MBE, the critical thickness, graded growth
7. Week  Buffer layer and the surface kinetics, thermodynamic equilibrium
8. Week  The choice of substrate; crystal growth on GaAs, GaP, InP substrates
9. Week  Grown structures on Si and Ge substrates, process of MEE
10. Week  Growth of single-layer, multi-layer structures with MBE
11. Week  Learning of superlattices, quantum wells, quantum dot, and their growing steps.
12. Week  III-V-N: Growth of dilute nitride structures with plasma source by MBE
13. Week  Growth of photodetector and quantum well photon detectors (QWIP)
14. Week  Growth of p-n junction structures, LED and laser structures
15. Week  Growth of single and quantum well solar cell structures by MBE
16. Week  Growth of multi-junction and tandem solar cells by MBE.
 -- RECOMMENDED OR REQUIRED READING
  Molecular Beam Epitaxy, M.A. Herman, H. Sister (Springer)1996.
 -- PLANNED LEARNING ACTIVITIES AND TEACHING METHODS
  This course; lectures, question-and-answer is in the form of the theoretical expression-learning method. In addition, the experimental system is shown MBE crystal growth stages and the student's participation in the experiment is provided.
 -- WORK PLACEMENT(S)
  -
 -- ASSESSMENT METHODS AND CRITERIA
 
Quantity
Percentage
 Mid-terms
1
30
 Assignment
1
30
 Exercises
0
0
 Projects
0
0
 Practice
0
0
 Quiz
0
0
 Contribution of In-term Studies to Overall Grade  
60
 Contribution of Final Examination to Overall Grade  
40
 -- WORKLOAD
 Efficiency  Total Week Count  Weekly Duration (in hour)  Total Workload in Semester
 Theoretical Study Hours of Course Per Week
14
2
28
 Practising Hours of Course Per Week
14
2
28
 Reading
0
 Searching in Internet and Library
2
2
4
 Designing and Applying Materials
8
4
32
 Preparing Reports
2
2
4
 Preparing Presentation
2
4
8
 Presentation
2
2
4
 Mid-Term and Studying for Mid-Term
2
6
12
 Final and Studying for Final
3
10
30
 Other
5
5
25
 TOTAL WORKLOAD: 
175
 TOTAL WORKLOAD / 25: 
7
 ECTS: 
7.5
 -- COURSE'S CONTRIBUTION TO PROGRAM
NO
PROGRAM LEARNING OUTCOMES
1
2
3
4
5
1X
2X
3X
4X
5X
6X
7X
8X
9X
10X
11X